Simulation and analysis of the I-V characteristics of a Schottky diode containing barrier inhomogeneitiesCHAND, S; KUMAR, J.Semiconductor science and technology. 1997, Vol 12, Num 7, pp 899-906, issn 0268-1242Article

Temperature measurements by semiconductor devicesVARAVA, A. N; KOMOV, A. T; MALAKHOV, Yu. I et al.Thermal engineering. 1998, Vol 45, Num 8, pp 683-685, issn 0040-6015Article

Nonlinear performance of the mixed translinear loopMUHAMMAD TAHER ABUELMA'ATTI; HUSAIN ABDULLAH AL-ZAHER.International journal of electronics. 1997, Vol 83, Num 4, pp 467-471, issn 0020-7217Article

Characteristics of silicon solar cells at increased illumination intensitiesBAKIROV, M. Ya.Applied solar energy. 1997, Vol 33, Num 2, pp 62-65, issn 0003-701XArticle

Atmospheric electricity model for the planetary electric generator and low-latitude thunderstorm currentsBESPALOV, P. A; CHUGUNOV, Yu. V.Radiophysics and quantum electronics. 1997, Vol 40, Num 1-2, pp 87-92, issn 0033-8443Article

Numerical simulation of current-voltage characteristics of photovoltaic systems with shaded solar cellsQUASCHNING, V; HANITSCH, R.Solar energy. 1996, Vol 56, Num 6, pp 513-520, issn 0038-092XArticle

Emission characteristics of restructured field-emission cathodes in the pulse-frequency modesEGOROV, N. V; ZHUKOV, V. M; PRUDNIKOV, A. P et al.Journal of communications technology & electronics. 1998, Vol 43, Num 6, pp 691-694, issn 1064-2269Article

Characteristic features of acoustoelectric generation and spectrum formation in single-crystal indium antimonideALEKSEEV, S. G; VERETIN, V. S; MANSFEL'D, G. D et al.Journal of communications technology & electronics. 1998, Vol 43, Num 3, pp 283-286, issn 1064-2269Article

Electrical properties of thin polyoxides grown at a low temperature using microwave oxygen plasmaSAHA, C; BERA, L. K; RAY, S. K et al.Semiconductor science and technology. 1998, Vol 13, Num 6, pp 599-602, issn 0268-1242Article

Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 KGREKHOV, I. V; SCHMALZ, K; SHULEKIN, A. F et al.Cryogenics (Guildford). 1998, Vol 38, Num 6, pp 613-618, issn 0011-2275Article

Turn-on process in high voltage 4H-SiC thyristorsDYAKONOVA, N. V; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 1998, Vol 13, Num 2, pp 241-243, issn 0268-1242Article

A metal/oxide tunnelling transistorSNOW, E. S; CAMPBELL, P. M; RENDELL, R. W et al.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A75-A78, issn 0268-1242Conference Paper

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlatticesLIU, J; GORNIK, E; XU, S et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1422-1424, issn 0268-1242Article

Cycle analyses of thermoelectric power generation and heat pumps using the β-alumina electrolyteONDA, K; MASUDA, T; NAGATA, S et al.Journal of power sources. 1995, Vol 55, Num 2, pp 231-236, issn 0378-7753Article

High transconductance-normally-off GaN MODFETsÖZGÜR, A; KIM, W; FAN, Z et al.Electronics Letters. 1995, Vol 31, Num 16, pp 1389-1390, issn 0013-5194Article

The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradationSPECKBACHER, P; BERGER, J; ASENOV, A et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 7, pp 1287-1296, issn 0018-9383Article

Planar microfabricated polymer light-emitting diodesSMELA, E; KAMINORZ, Y; INGANÄS, O et al.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 433-439, issn 0268-1242Article

Current oscillations and stable electric field domains in doped GaAs/AlAs superlatticesSUN, B; JIANG, D; WANG, X et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 401-405, issn 0268-1242Article

An analytical model for the above-threshold characteristics of polysilicon thin-film transistorsHORNG NAN CHERN; CHUNG LEN LEE; TAN FU LEI et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 7, pp 1240-1246, issn 0018-9383Article

Computation of current and transconductance of a nonuniformly doped channel MOSFET with an arbitrary doping profileCHONG-LUNG WANG.Solid-state electronics. 1995, Vol 38, Num 8, pp 1423-1429, issn 0038-1101Article

Forward current-voltage characteristics of light-emitting diodes at low temperaturesAKIMOTO, H; MARCHENKOV, A; JOCHEMSEN, R et al.Cryogenics (Guildford). 1998, Vol 38, Num 4, pp 451-452, issn 0011-2275Article

Relaxation oscillations in asymmetric superconducting tunnel junctions and their potential application to the detection of high-energy particlesNEVIRKOVETS, I. P.Superconductor science & technology (Print). 1998, Vol 11, Num 8, pp 711-715, issn 0953-2048Article

Slow polaritons in a superconductor-antiferromagnetic-superconductor layered structureBUGAEV, A. S; POLZIKOVA, N. I; RAEVSKII, A. O et al.Journal of communications technology & electronics. 1998, Vol 43, Num 6, pp 677-681, issn 1064-2269Article

Solar hydrogen production employing n-TiO₂/Ti SC-SEP, photoelectrochemical solar cellMISRA, M; PANDEY, R. N; SRIVASTAVA, O. N et al.International journal of hydrogen energy. 1997, Vol 22, Num 5, pp 501-508, issn 0360-3199Article

Use of azine dye as a photosensitizer in solar cells : Different reductants-safranine systemsGANGOTRI, K. M; OM PRAKASH REGAR.International journal of energy research. 1997, Vol 21, Num 14, pp 1345-1350, issn 0363-907XArticle